中国科学院金属研究所沈阳材料科学国家研究中心的研究人员 recently unveiled a revolutionary "闪速退火" (flash quenching) technique that allows for the rapid production of high-performance energy storage thin films on silicon wafers. This breakthrough has significant implications for the development of next-generation high-performance energy storage devices, such as supercapacitors.
The traditional method of producing these energy storage devices is extremely challenging due to its sensitivity to extreme temperatures. The researchers faced a daunting task: how to maintain the device's strong storage capabilities while withstanding temperatures ranging from -196°C to 400°C (-320°F to 752°F)?
To address this issue, the research team developed a novel "闪速退火" technique that enables rapid thermal cycling at rates of up to 1000°C per second. Using this innovative method, they successfully created high-performance energy storage thin films in just one second.
The key to this breakthrough lies in the use of advanced materials and structures. By employing "闪速退火," researchers were able to "freeze" the material's crystal structure at room temperature, creating tiny nanoscale features with dimensions smaller than 3 nanometers. These intricate structures act as a maze-like pathway for inducing ferroelectric behavior, which is crucial for high-efficiency energy storage.
Furthermore, the "闪速退火" technique helps to lock in the thin film's microstructure, making it denser and more uniform. This results in reduced material defects and a significant decrease in leakage current, ultimately leading to improved performance.
The research team demonstrated that the new thin film-based supercapacitor exhibits exceptional environmental adaptability. Under extreme conditions of -196°C (liquid nitrogen) and 400°C (hot oil), its storage density and efficiency decreased by only 3%. This means it can reliably operate in both freezing temperatures and scorching heat.
Currently, researchers have successfully produced uniformly high-performance thin films on 2-inch silicon wafers, paving the way for industrial-scale integration of energy storage technology.
The traditional method of producing these energy storage devices is extremely challenging due to its sensitivity to extreme temperatures. The researchers faced a daunting task: how to maintain the device's strong storage capabilities while withstanding temperatures ranging from -196°C to 400°C (-320°F to 752°F)?
To address this issue, the research team developed a novel "闪速退火" technique that enables rapid thermal cycling at rates of up to 1000°C per second. Using this innovative method, they successfully created high-performance energy storage thin films in just one second.
The key to this breakthrough lies in the use of advanced materials and structures. By employing "闪速退火," researchers were able to "freeze" the material's crystal structure at room temperature, creating tiny nanoscale features with dimensions smaller than 3 nanometers. These intricate structures act as a maze-like pathway for inducing ferroelectric behavior, which is crucial for high-efficiency energy storage.
Furthermore, the "闪速退火" technique helps to lock in the thin film's microstructure, making it denser and more uniform. This results in reduced material defects and a significant decrease in leakage current, ultimately leading to improved performance.
The research team demonstrated that the new thin film-based supercapacitor exhibits exceptional environmental adaptability. Under extreme conditions of -196°C (liquid nitrogen) and 400°C (hot oil), its storage density and efficiency decreased by only 3%. This means it can reliably operate in both freezing temperatures and scorching heat.
Currently, researchers have successfully produced uniformly high-performance thin films on 2-inch silicon wafers, paving the way for industrial-scale integration of energy storage technology.